Hg(577nm、579nm)塞曼效应分析

本文对Hg的577 nm、579 nm谱线的塞曼效应进行了理论分析和实验验证,通过对F-P标准具分辨率的讨论.证明实验现象与理论分析是一致的.定量计算了分裂谱线的波数差.     

化学蒸汽发生/电感耦合等离子体质谱法测定近岸及河口海水中的超痕量砷、锑、铋、锗、锡、汞

建立了化学蒸汽发生(CVG)电感耦合等离子体质谱(ICP MS)同时测定近岸及河口海水中超痕量As、Sb、Bi、Ge、Sn和Hg元素的方法.研究了CVG过程中KBH4、盐酸和硫脲的浓度以及样品流速、载气流速、海水样品盐度等对方法分析性能的影响.结果表明,在0.70％6盐酸、0.10 g/L硫脲、11.0 g/L硼氧化钾...     

Ultra Sensitive Quantification of Thiourea at Nanomolar Level by Catalytic‐Kinetic Differential Pulse Voltammetry

A new simple and highly selective and sensitive catalytic differential pulse voltammetry procedure for the determination of thiourea at nanomolar level is reported. Thiourea has a catalytic effect on the oxidation of Janus green by iodate in the hydrochloric acid medium. The potential was scanned in the negative direction and the differential pulse voltammograms were recorded. The variations of the peak current with hydrochloric acid concentration, oxidant, Janus green, pulse amplitude, pulse time and scan rate were optimized. Under the optimized conditions, the relationship between the peak current and concentration of thiourea was obtained. It is shown that the calibration curve is linear in the range of 0.01–6.00 µg/mL. The detection limit of the method was 0.005 µg/mL. The relative standard deviation for 6 replicate determinations of 0.01, 0.50 and 2.00 µg/mL is equal to 2.25%, 1.52% and 1.03%, respectively. The method was applied to the determination of thiourea in fruit juices with satisfactory results.     

一种容积法测小流量研究

针对高压汽水两相流实验中小液量测量困难这一问题，运用重力压差主要由液相密度决定的原理，提出了由圆管内重力压差变化线性分求流量的方法，实验表明这一方法线性度很好，本文对这一方法进行了理论分析，得到了计算修正公式，同时评估了计算带来的误差。     

可靠性设计中的疲劳裂纹扩展随机模型

首先导出了疲劳裂纹扩展的确定性方程，然后将疲劳裂纹扩展确定性方程随机化，导出了疲劳裂纹随机扩展的概率公式，并推导了疲劳裂纹随机扩展的置信限公式，最后，给出了二种材料疲劳裂纹随机扩展数据的处理结果。     

Switching and Swapping of Quantum Information: Entropy and Entanglement Level

Information switching and swapping seem to be fundamental elements of quantum communication protocols. Another crucial issue is the presence of entanglement and its level in inspected quantum systems. In this article, a formal definition of the operation of the swapping local quantum information and its existence proof, together with some elementary properties analysed through the prism of the concept of the entropy, are presented. As an example of the local information swapping usage, we demonstrate a certain realisation of the quantum switch. Entanglement levels, during the work of the switch, are calculated with the Negativity measure and a separability criterion based on the von Neumann entropy, spectral decomposition and Schmidt decomposition. Results of numerical experiments, during which the entanglement levels are estimated for systems under consideration with and without distortions, are presented. The noise is generated by the Dzyaloshinskii-Moriya interaction and the intrinsic decoherence is modelled by the Milburn equation. This work contains a switch realisation in a circuit form—built out of elementary quantum gates, and a scheme of the circuit which estimates levels of entanglement during the switch’s operating.     

Investigation on sound absorption properties of kapok fibers

Sound absorption properties of natural kapok fibers have been investigated. Kapok fibrous assemblies with different bulk density, thickness, fiber length and orientation were manufactured, and their acoustical performances were evaluated by using an impedance tube instrument. Results show that the kapok fiber has excellent acoustical damping performance due to its natural hollow structure, and the sound absorption coefficients of kapok fibrous assemblies are significantly affected by the bulk density, thickness and arrangement of kapok fibers but less dependent on the fiber length. Compared with assemblies of commercial glass wool and degreasing cotton fibers, the kapok fiber assemblies with the same thickness but much smaller bulk density may have the similar sound absorption coefficients. Theoretical modelling of the acoustical damping performance of kapok fibers shows a good agreement with the experimental data. All the results demonstrate that kapok fiber is a promising light and environment-friendly sound absorption material.     

Explicit characteristic‐based finite volume element method for level set equation

Accurate modeling of interfacial flows requires a realistic representation of interface topology. To reduce the computational effort from the complexity of the interface topological changes, the level set method is widely used for solving two‐phase flow problems. This paper presents an explicit characteristic‐based finite volume element method for solving the two‐dimensional level set equation. The method is applicable for the case of non‐divergence‐free velocity field. Accuracy and performance of the proposed method are evaluated via test cases with prescribed velocity fields on structured grids. By given a velocity field, the motion of interface in the normal direction and the mean curvature, examples are presented to demonstrate the performance of the proposed method for calculating interface evolutions in time. Copyright © 2010 John Wiley & Sons, Ltd.     

Surface electronic properties of sulfur-treated GaAs determined by surface photovoltage measurement and its computer simulation

The Kelvin method together with the simulations of surface photovoltage has been used to determine the surface electronic properties, i.e. the surface band bending (qV_S), surface state density (N_SS0) and surface fixed charge (Q_Fx) of S₂Cl₂-treated GaAs (100) surfaces. The measured values of surface photovoltage (SPV) do not show saturation at high photon flux densities in contradiction to the simple theory of SPV. This behavior of SPV agrees very well with the rigorous computer simulations and can be explained in terms of the Dember effect. Moreover, the SPV values become insensitive to surface states at moderate photon flux densities. On this basis, the surface band bending of untreated (0.79 eV) and S₂Cl₂-treated (0.60 eV) GaAs surfaces was determined. The band diagrams summarizing the obtained results proved the influence on the potential variations not only from the ionized surface states and surface fixed charge but also from the surface dipole layer on the S₂Cl₂-treated GaAs surface. The dipole arises most probably due to the S-Ga bonding on the surface. The presented results offer an alternative explanation for increased PL commonly observed after the sulfidation in the absence of substantial reduction in the band bending.